GFB75N03 |
RFQ for GFB75N03 |
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| Product | Manufacturers | Pack | D/C |
| GFB75N03 | - | TO-263 | 08+ |
Features |
| • Advanced Trench Process Technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for Low Voltage DC/DC Converters• Fast Switching for High Efficiency• High temperature soldering in accordance with CECC802/Reflow guaranteed |
|
Parameter |
Symbol |
Limit |
Unit | |
| Drain-Source Voltage |
VDS |
30 |
V | |
| Gate-Source Voltage |
VGS |
±20 | ||
| Continuous Drain Current(1) |
ID |
75 |
A | |
| Pulsed Drain Current |
IDM |
240 | ||
| Maximum Power Dissipation | TA = 25°C |
PD |
62.5 |
W |
| TA = 100°C |
25 | |||
| Operating Junction and Storage Temperature Range |
TJ,Tstg |
-55to150 |
°C | |
| Lead Temperature (1/8" from case for 5 sec.) |
TL |
275 |
°C | |
| Junction-to-Case Thermal Resistance |
RJC |
2.0 |
°C/W
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